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Package Marking and Ordering Information
Device Marking
IRFW630B
Device
IRFW630BTM_FP001
Package
D 2 -PAK
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics
T C = 25°C unless otherwise noted .
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 2 00 V, V GS = 0 V
V DS = 16 0 V, T C = 125 ° C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
2 00
--
--
--
--
--
--
0. 2
--
--
--
--
--
--
10
100
100
-100
V
V / ο C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 4. 5 A
V DS = 40 V, I D = 4. 5 A
2.0
--
--
--
0. 34
7.05
4.0
0. 4
--
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
550
85
22
720
110
2 9
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 10 0 V, I D = 9.0 A
R G = 25 ?
V DS = 16 0 V, I D = 9.0 A
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
11
70
60
65
22
3.6
10.2
30
1 5 0
130
140
29
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
9.0
36
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 9.0 A
V GS = 0 V, I S = 9.0 A
dI F /dt =100 A/ μ s
--
--
--
--
140
0.87
1. 5
--
--
V
ns
μ C
Notes:
1. Repetitive r ating: p ulse - width limited by maximum junction temperature .
2. L = 3 mH, I AS = 9.0 A, V DD = 50 V, R G = 25 ?, s tarting T J = 25°C .
3. I SD ≤ 9.0 A, di/dt ≤ 3 00 A/ μ s, V DD ≤ BV DSS, s tarting T J = 25°C .
4 . Essentially i ndependent of o perating t emperature .
?200 2 Fairchild Semiconductor Corporation
IRFW630B Rev. C1
2
www.fairchildsemi.com
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